Zu Produktinformationen springen
Lineare Hall-Effekt-Sensorelemente CYSJ106C
Linear Hall Effect Sensors Elements CYSJ106C
CYSJ106C series Hall-effect element is a ion-implanted magnetic field sensor made of monocrystal gallium arsenide (GaAs) semiconductor material group Ⅲ-V using ion-implanted technology. It can convert a magnetic flux density signal linearly into voltage output.
Characteristics:
-
High Linearity
- Superior Temperature Stability
- Miniature Package
- Wide measuring range 0-3T
Application:
-
Magnetic Field Measurement
- DC Brushless Motor
- Current Sensor
- Non-contact Switch
- Position Control
- Detection Of Revolution
| Operating Temperature: | -40°C ~ +125°C |
| Measuring range: | 3T |
| Package/Size: | SMT/1.5x1.5x0.6mm |
| Max. Sensitivity: | 1.80 ~ 2.4 mV/mT |
| Linearity: | 2% |
| Input/Output Resistance: | 650 ~ 850 kΩ/ 650 ~ 850kΩ |
| Max. Supply current/voltage: | 13 mA/10 V |
Data sheets:
Manufacturer:
Company name: ChenYang Technologies GmbH & Co.KG
Address: Markt Schwabener Str. 8; 85464 Finsing; Deutschland
E-Mail: info@chenyang.de
Phone: +49 8121 2574100
